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Ansprechpartner : Wang Hong

Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply

  • Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply
  • Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply
  • Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply
Herkunftsort XIAN, SHANNXI CHINA
Markenname XIWUER
Zertifizierung ISO9001,ISO14001,OHSAS18001
Modellnummer CT8-1-40KV-150PF
Min Bestellmenge 1 Stück
Preis Verhandlungsfähig
Verpackung Informationen Karton
Lieferzeit 10-15 Tage
Zahlungsbedingungen L/c, t/t
Versorgungsmaterial-Fähigkeit 4.000.000 PC ein Jahr

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Produktdetails
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Low Dissipation High Voltage Doorknob Capacitor

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High Withstanding Voltage RF Power Supply Capacitor

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High Insulation Resistance HV Doorknob Capacitor
Hinterlass eine Nachricht
Produkt-Beschreibung
High Voltage Doorknob Capacitors for RF Power Supply
Technical Specifications
No. Specification Dissipation Withstanding Voltage Insulation Resistance Dimensions (mm)
1 20kV-2000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:45 | H:19 | L:23 | D:12 | M:5
2 20kV-10000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:65 | H:15 | L:19 | D:12 | M:5
3 20kV-18000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:80 | H:17 | L:25 | D:12 | M:5
4 30kV-1000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:45 | H:24 | L:32 | D:12 | M:4
5 30kV-2700pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:60 | H:20 | L:28 | D:12 | M:4
6 30kV-12000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:45 | H:19 | L:23 | D:12 | M:5
7 40kV-150pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:74 | H:18 | L:26 | D:12 | M:5
8 40kV-500pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:28 | H:33 | L:41 | D:8 | M:4
9 40kV-7500pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:80 | H:24 | L:29 | D:12 | M:6
10 40kV-10000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:80 | H:22 | L:26 | D:16 | M:5
Application in PECVD Equipment
Our high-voltage doorknob capacitors provide stable high voltage for Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment, essential for semiconductor, photovoltaic, and optical coating industries. These capacitors enable low-temperature deposition of high-quality thin films by maintaining stable, uniform plasma through efficient RF power supply performance.
Technical Challenges Addressed
  • Impedance Matching: Efficient power coupling to dynamically changing plasma loads
  • High RF Power Handling: Withstands electrical stresses from high frequency and voltage
  • Thermal Management: Minimizes heat accumulation from dielectric and electrode losses
  • Long-term Stability: Prevents capacitance drift that affects deposition rate and film quality
Solution: High-Q, Low-ESR Doorknob Capacitors
  • Efficient Power Transfer: Low ESR minimizes heat generation with high RF currents
  • Thermal Stability: Temperature-compensated ceramic dielectric maintains stable capacitance
  • High Reliability: Rugged construction ensures long service life in demanding RF conditions
Customer Benefits
  • Improved film quality and consistency through stable impedance matching
  • Increased productivity and yield with reduced process interruptions
  • Lower operating costs from reduced energy consumption and maintenance
Our high-voltage doorknob capacitors serve as the "impedance harmonizer" for PECVD equipment, enabling precise atomic-level deposition for superior thin film production.
Umbauten:

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